Title :
All-optical switching with extremely-small control energy in InGaAsP-based photonic crystal nanocavity
Author :
Nozaki, K. ; Tanabe, T. ; Shinya, A. ; Matsuo, S. ; Sato, T. ; Taniyama, H. ; Notomi, M.
Author_Institution :
NTT Basic Res. Labs., Atsugi, Japan
Abstract :
An ultralow switching energy of 1 fJ is demonstrated in an InGaAsP-based photonic crystal nanocavity with ultrasmall volume, which also contributes to the switching time window of 30 ps owing to the fast carrier diffusion.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical switches; photonic crystals; carrier diffusion; energy 1 fJ; photonic crystal nanocavity; sll-optical switching; time 30 ps; ultrasmall volume; Absorption; Acceleration; Couplings; Gallium arsenide; Laboratories; Optical control; Photonic crystals; Probes; Resonance; Switches;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343482
