• DocumentCode
    2539278
  • Title

    All-optical switching with extremely-small control energy in InGaAsP-based photonic crystal nanocavity

  • Author

    Nozaki, K. ; Tanabe, T. ; Shinya, A. ; Matsuo, S. ; Sato, T. ; Taniyama, H. ; Notomi, M.

  • Author_Institution
    NTT Basic Res. Labs., Atsugi, Japan
  • fYear
    2009
  • fDate
    4-8 Oct. 2009
  • Firstpage
    34
  • Lastpage
    35
  • Abstract
    An ultralow switching energy of 1 fJ is demonstrated in an InGaAsP-based photonic crystal nanocavity with ultrasmall volume, which also contributes to the switching time window of 30 ps owing to the fast carrier diffusion.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical switches; photonic crystals; carrier diffusion; energy 1 fJ; photonic crystal nanocavity; sll-optical switching; time 30 ps; ultrasmall volume; Absorption; Acceleration; Couplings; Gallium arsenide; Laboratories; Optical control; Photonic crystals; Probes; Resonance; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
  • Conference_Location
    Belek-Antalya
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-3680-4
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2009.5343482
  • Filename
    5343482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2539278