Title :
Design and progress of a wideband 120–210 GHz low noise amplifier
Author :
Eskanadri, Sina ; Hamedani, Farzad Tavakkol
Author_Institution :
Commun. Dept., Semnan Univ., Semnan, Iran
Abstract :
In order to further improve the sensitivity and resolution of radiometer front-ends and also astronomy applications, amplifiers are needed with the lowest noise figure and high flat gain in G-band frequency range. Hence, we designed and demonstrated a MMIC LNA using Agilent EEHEMT model of 0.07 μm InP HEMT for operating at 120-210 GHz frequency broadband range. Simulation results illustrate smooth gain greater than 23 dB and noise figure about 1.5 dB across the bandwidth at 290 K according to IEEE standard ambient temperature. Input and output return losses are greater than 10 dB and LNA is unconditionally stable at its operating frequency range. Validation of performance for designed MMIC LNA was investigated from many aspects by simulation and measurement results which were done for MMICs InP HEMT technology during last years.
Keywords :
MMIC amplifiers; indium compounds; low noise amplifiers; wideband amplifiers; InP; MMIC LNA; astronomy applications; frequency 120 GHz to 210 GHz; radiometer front-ends; resolution; sensitivity; wideband low noise amplifier; Gain; HEMTs; Indium phosphide; Logic gates; MMICs; Mathematical model; Noise figure; EEHEMT nonlinear model; InP HEMT; Low Noise Amplifier; Monolithic Millimeter wave Integrated Circuits (MMICs);
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-1435-1
DOI :
10.1109/MIKON.2012.6233630
