Title :
H-band MMIC amplifiers in 250 nm InP DHBT
Author :
Eriksson, Klas ; Vassilev, Vessen ; Zirath, Herbert
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
In this paper, single-stage and multistage amplifiers of two different topologies, common-base with resistive feedback and common-emitter, operating at up to 290 GHz are presented and demonstrated. The amplifiers use an indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) process. The multistage common-emitter amplifier demonstrates a gain above 10 dB from 220 to 280 GHz with a peak gain of 15 dB while the multistage common-base amplifier demonstrates a gain of 16 dB at 265 GHz.
Keywords :
MMIC amplifiers; heterojunction bipolar transistors; indium compounds; network topology; DHBT; H-band MMIC amplifiers; InP; different topologies; frequency 220 GHz to 280 GHz; multistage amplifiers; resistive feedback; single-stage amplifiers; size 250 nm; DH-HEMTs; Gain; Indium phosphide; MMICs; Microstrip; Probes; Topology; Amplifier; H-band; InP double-heterojunction bipolar transistor (DHBT); millimeter-wave; monolithic microwave integrated circuit (MMIC);
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-1435-1
DOI :
10.1109/MIKON.2012.6233636
