Low phase noise 2 GHz HBT push-push VCO based on an advanced low frequency noise model

Author

Cortese, P. ; Sion, A. ; Baglieri, D. ; Camiade, Marc ; Nallatamby, J.C. ; Prigent, M. ; Obregon, J.

Author_Institution

UMS S.A.S., Orsay, France

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

291

Lastpage

294

Abstract

After investigation of the possible HBT low frequency noise sources and their localization in order to extract a HBT low frequency noise model, the realisation and performance of an S band voltage controlled oscillator (VCO) is reported. This VCO is fully integrated in MMIC technology, and is based on a push-push topology. The circuit is covering 340 MHz tuning range around a centre frequency of 2 GHz with a phase noise of -95 dBc/Hz at 10 KHz offset.

Keywords

MMIC oscillators; heterojunction bipolar transistors; phase noise; semiconductor device models; voltage-controlled oscillators; 10 KHz; 2 GHz; 340 MHz; MMIC technology; S-band voltage controlled oscillator; advanced low frequency noise model; heterojunction bipolar transistor; low phase noise HBT; push-push VCO; push-push topology; Fluctuations; Frequency measurement; Heterojunction bipolar transistors; Low-frequency noise; Microwave oscillators; Noise figure; Noise generators; Noise measurement; Phase noise; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE

ISSN

1550-8781

Print_ISBN

0-7803-8616-7

Type

conf

DOI

10.1109/CSICS.2004.1392570

Filename

1392570