94 GHz silicon co-integrated LNA and Antenna in a mm-wave dedicated BiCMOS technology

Author

Pilard, R. ; Gloria, D. ; Gianesello, Frederic ; Le Pennec, F. ; Person, C.

Author_Institution

STMicroelectronics, Technol. R&D - STD - TPS, Crolles, France

fYear

2010

fDate

23-25 May 2010

Firstpage

83

Lastpage

86

Abstract

A co-integrated Low Noise Amplifier (LNA) with a dipole antenna is designed considering a millimeter-wave dedicated BiCMOS technology. The targeted application is a 94 GHz passive imaging for security applications. The LNA is based on a high-speed SiGe:C 130 nm HBT. The interest of the co-integration on a common silicon substrate is demonstrated through the decrease of insertion losses between the antenna and the amplifier. The capability of the BiCMOS9MW technology is illustrated to achieve this co-integration reaching a total gain of 3.0 dB (G_antenna + G_LNA) for a power consumption of 11 mW, in a single-stage LNA configuration. A two-stage configuration achieves a total gain of 8.5 dB with a power consumption of 21 mW.

Keywords

BiCMOS integrated circuits; dipole antennas; heterojunction bipolar transistors; low noise amplifiers; millimetre wave integrated circuits; power consumption; HBT; SiGe; cointegrated LNA; cointegrated low noise amplifier; dipole antenna; frequency 94 GHz; gain 3 dB; gain 8.5 dB; mm-wave dedicated BiCMOS technology; passive imaging; power 11 mW; power 21 mW; power consumption; security application; silicon substrate; size 130 nm; BiCMOS integrated circuits; Dipole antennas; Energy consumption; Gain; Heterojunction bipolar transistors; Insertion loss; Low-noise amplifiers; Millimeter wave technology; Security; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE

Conference_Location

Anaheim, CA

ISSN

1529-2517

Print_ISBN

978-1-4244-6240-7

Type

conf

DOI

10.1109/RFIC.2010.5477390

Filename

5477390