Title :
An electronically temperature-compensated 427MHz low phase-noise AlN-on-Si micromechanical reference oscillator
Author :
Lavasani, Hossein Miri ; Pan, Wanling ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper reports on the first demonstration of series tuning for lateral micromechanical oscillators and its application in a temperature-compensated 427MHz AlN-on-Si reference oscillator. The sustaining amplifier is a 13mW tunable TIA implemented in 0.18μm CMOS that uses shunt-parasitic cancellation to increase the tuning by 12× to 810ppm. The tunable oscillator along with a 2mW on-chip temperature compensation circuit has reduced the overall frequency drift to 70ppm in -10°C to 70°C. The phase-noise of the oscillator reaches -82dBc/Hz at 1kHz offset with floor below -147dBc/Hz.
Keywords :
CMOS integrated circuits; amplifiers; micromechanical devices; oscillators; phase noise; AlN-on-Si reference oscillator; CMOS; amplifier; frequency 1 kHz; frequency 427 MHz; lateral micromechanical oscillators; on-chip temperature compensation circuit; phase-noise; power 13 mW; power 2 mW; shunt-parasitic cancellation; size 0.18 mum; temperature -10 C to 70 C; tunable oscillator; Circuit optimization; Frequency; Micromechanical devices; Oscillators; Parasitic capacitance; RLC circuits; Radiofrequency integrated circuits; Temperature; Tunable circuits and devices; Tuning; MEMS; Micromechanical oscillator; phase-noise; temperature compensated;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6240-7
DOI :
10.1109/RFIC.2010.5477392
