Title :
A 110-GHz AlSb/InAs MMIC amplifier
Author :
Deal, W. ; Tsai, R. ; Lange, M. ; Grundbacker, R. ; Lee, L.J. ; Padmanabhan, K. ; Liu, P.H. ; Namba, C. ; Nam, P. ; Gutierrez, A. ; Bennett, B.R. ; Boos, J.B.
Author_Institution :
Northrop Grumman Space Technol., Inc., Redondo Beach, CA, USA
Abstract :
We describe the first demonstration of a W-band amplifier using antimonide based compound semiconductor (ABCS) device technology. The three stage CPW MMIC uses two finger 0.1-μm AlSb/InAs HEMT with a total periphery of 40 micron per device. Biased at a total MMIC dissipation of 3.7-m W the amplifier demonstrates 11± 1 dB gain over a 80-110 GHz bandwidth. When biased at total MMIC dissipation of 9.0 mW, the amplifier demonstrates 15± 1 dB gain over 80-100 GHz bandwidth.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; coplanar waveguides; high electron mobility transistors; indium compounds; millimetre wave amplifiers; 0.1 micron; 11 dB; 110 GHz; 15 dB; 3.7 mW; 80 to 110 GHz; 9 mW; AlSb-InAs; HEMT; MMIC amplifier; W-band amplifier; antimonide based compound semiconductor; coplanar waveguide MMIC; Bandwidth; Conductors; Coplanar waveguides; Frequency; Gain; HEMTs; MMICs; Noise figure; Power transmission lines; Space technology;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392574
