Title :
Broadband low-noise amplifiers for K- and Q-bands using 0.2 μm InP HEMT MMIC technology
Author :
Limacher, Roger ; Megej, Alexander ; Scoca, Luigi ; Zaugg, Thomas ; Meier, Hanspeter ; Orzati, Andrea ; Bächtold, Werner
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
Design, manufacturing, and performance of two MMIC low-noise amplifiers are presented in this paper. The circuits cover wide frequency ranges of 16-26 GHz and 25-49 GHz. The amplifiers are implemented using our in-house 0.2 p.m InP HEMT process. The measurements at room temperature show a gain higher than 14.5 dB and 11 dB and a corresponding mean noise temperature of 208 K and 235 K within the K- and Q-bands, respectively. Operated at the temperature of 10 K, the amplifiers exhibit a gain of higher than 13.5 dB and 10 dB within the frequency bands of 16-26 GHz and 23-44 GHz, respectively.
Keywords :
III-V semiconductors; MMIC amplifiers; high electron mobility transistors; indium compounds; millimetre wave amplifiers; wideband amplifiers; 0.2 micron; 10 K; 16 to 26 GHz; 208 K; 23 to 44 GHz; 235 K; 25 to 49 GHz; HEMT MMIC technology; InP; K-band; MMIC amplifier; Q-band; broadband low-noise amplifiers; Broadband amplifiers; Circuits; Frequency; Gain measurement; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Pulp manufacturing; Temperature measurement;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392575
