Title :
High-gain direct-coupled matrix distributed amplifier using active feedback topology
Author :
Ko, Won ; Kwon, Youngwoo
Author_Institution :
Sch. of Electr. & Comput. Sci., Seoul Nat. Univ., South Korea
Abstract :
A high-gain matrix distributed amplifier (DA) was developed using a commercial GaAs PHMET foundry for 40-Gb/s baseband applications. Two tiers of matrix DA are directly coupled using a lumped DC level-shift circuit. The DC bias level of the second tier can be tuned using the level-shift circuit for optimum gain. The gain of the matrix DA has been optimized using an active feedback cascode topology, which allows the gain-bandwidth product (GBWP) to be maximized while avoiding instability problems. In order to improve the gain, the second tier is shifted to the output load. The fabricated single-chip matrix DA with a size of 2.4 mm × 1.4 mm showed a high gain of 19 dB, and an average noise figure of 5.7 dB with a 48-GHz bandwidth. The GBWP is 428 GHz, which corresponds to the highest performance using GaAs technology for matrix DAs.
Keywords :
HEMT integrated circuits; III-V semiconductors; circuit feedback; distributed amplifiers; gallium arsenide; 1.4 mm; 19 dB; 2.4 mm; 40 Gbit/s; 48 GHz; 5.7 dB; GaAs; GaAs PHMET foundry; active feedback topology; direct-coupled matrix distributed amplifier; gain-bandwidth product; high-gain distributed amplifier; lumped DC level-shift circuit; single-chip matrix DA; Baseband; Circuit topology; Coupling circuits; Distributed amplifiers; Feedback; Foundries; Gain; Gallium arsenide; Noise figure; Tuned circuits;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE
Print_ISBN :
0-7803-8616-7
DOI :
10.1109/CSICS.2004.1392576