Electrostatic gating of ion and molecule transport through a nanochannel-array membrane

Author

Pardon, G. ; van der Wijngaart, W.

Author_Institution

Microsyst. Technol. Lab., KTH R. Inst. of Technol., Stockholm, Sweden

fYear

2011

fDate

5-9 June 2011

Firstpage

1610

Lastpage

1613

Abstract

This work presents a predictive and today´s most complete model for electrostatic gating of nanofluidic channels. The model is based on the classical mean field equations and accounts for the surface reactivity. The model is successfully verified against previously published experimental data [1]. The fabrication concept of a novel device is introduced and its predicted performances are discussed with the help of the presented model. A ~40x performance improvement, in terms of tunability of the ionic conductivity in the nanochannel, in comparison to the result presented in [1], is expected.

Keywords

electrostatics; ionic conductivity; nanofabrication; nanofluidics; classical mean field equation; electrostatic gating; ion transport; ionic conductivity; molecule transport; nanochannel-array membrane; nanofluidic channel; surface reactivity; Conductivity; Data models; Electric potential; Logic gates; Mathematical model; Nanoscale devices; Predictive models; Nanofluidics; electrostatic gating; model; nanochannels; surface charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969802

Filename

5969802