DocumentCode :
2539968
Title :
Electrostatic gating of ion and molecule transport through a nanochannel-array membrane
Author :
Pardon, G. ; van der Wijngaart, W.
Author_Institution :
Microsyst. Technol. Lab., KTH R. Inst. of Technol., Stockholm, Sweden
fYear :
2011
fDate :
5-9 June 2011
Firstpage :
1610
Lastpage :
1613
Abstract :
This work presents a predictive and today´s most complete model for electrostatic gating of nanofluidic channels. The model is based on the classical mean field equations and accounts for the surface reactivity. The model is successfully verified against previously published experimental data [1]. The fabrication concept of a novel device is introduced and its predicted performances are discussed with the help of the presented model. A ~40x performance improvement, in terms of tunability of the ionic conductivity in the nanochannel, in comparison to the result presented in [1], is expected.
Keywords :
electrostatics; ionic conductivity; nanofabrication; nanofluidics; classical mean field equation; electrostatic gating; ion transport; ionic conductivity; molecule transport; nanochannel-array membrane; nanofluidic channel; surface reactivity; Conductivity; Data models; Electric potential; Logic gates; Mathematical model; Nanoscale devices; Predictive models; Nanofluidics; electrostatic gating; model; nanochannels; surface charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International
Conference_Location :
Beijing
ISSN :
Pending
Print_ISBN :
978-1-4577-0157-3
Type :
conf
DOI :
10.1109/TRANSDUCERS.2011.5969802
Filename :
5969802
Link To Document :
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