An analytical MOSFET model including gate voltage dependence of channel length modulation parameter for 20nm CMOS

This paper describes an analytical MOSFET model for 20 nm CMOS. The model includes the gate voltage dependence of the channel length modulation parameter. It is found that the channel length modulation parameter extracted from experimental data has remarkable gate voltage dependence in sub 65 nm region. The dependence has been successfully modeled and included in an analytical MOSFET model. This model can predict the current - voltage characteristics with in good accuracy for n-channel and p-channel MOSFETs down to 20 nm.