Title :
Effect of fringing field in modeling of subthreshold surface potential in Dual Material Gate(DMG) MOSFETS
Author :
De, Swapnadip ; Sarkar, Angsuman ; Mohankumar, N. ; Sarkar, Chandan Kumar
Author_Institution :
Dept. of ECE, Meghnad Saha Inst. of Technol., Kolkata
Abstract :
An analytical subthreshold surface potential model for Dual Material Gate MOSFET including the effect of inner fringing field is presented, considering surface potential variation with the depth of the channel depletion layer. A pseudo two dimensional method is adopted and a more accurate prediction of surface potential including the fringing field effect is reported.
Keywords :
MOSFET; semiconductor device models; surface potential; analytical subthreshold surface potential model; channel depletion layer; dual material gate MOSFET; fringing field; pseudotwo-dimensional method; Analytical models; Differential equations; Electrodes; Gaussian channels; Hot carriers; MOSFETs; Nonuniform electric fields; Parasitic capacitance; Poisson equations; Voltage; DMG MOSFET; Inner Fringing Field; Pseudo 2-D analysis; Surface Potential;
Conference_Titel :
Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-2014-8
Electronic_ISBN :
978-1-4244-2015-5
DOI :
10.1109/ICECE.2008.4769190
