• DocumentCode
    2540109
  • Title

    Effect of fringing field in modeling of subthreshold surface potential in Dual Material Gate(DMG) MOSFETS

  • Author

    De, Swapnadip ; Sarkar, Angsuman ; Mohankumar, N. ; Sarkar, Chandan Kumar

  • Author_Institution
    Dept. of ECE, Meghnad Saha Inst. of Technol., Kolkata
  • fYear
    2008
  • fDate
    20-22 Dec. 2008
  • Firstpage
    148
  • Lastpage
    151
  • Abstract
    An analytical subthreshold surface potential model for Dual Material Gate MOSFET including the effect of inner fringing field is presented, considering surface potential variation with the depth of the channel depletion layer. A pseudo two dimensional method is adopted and a more accurate prediction of surface potential including the fringing field effect is reported.
  • Keywords
    MOSFET; semiconductor device models; surface potential; analytical subthreshold surface potential model; channel depletion layer; dual material gate MOSFET; fringing field; pseudotwo-dimensional method; Analytical models; Differential equations; Electrodes; Gaussian channels; Hot carriers; MOSFETs; Nonuniform electric fields; Parasitic capacitance; Poisson equations; Voltage; DMG MOSFET; Inner Fringing Field; Pseudo 2-D analysis; Surface Potential;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    978-1-4244-2014-8
  • Electronic_ISBN
    978-1-4244-2015-5
  • Type

    conf

  • DOI
    10.1109/ICECE.2008.4769190
  • Filename
    4769190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2540109