Effect of electron-beam irradiation on electrical characterization of nanowires in scanning electron microscope

Author

Zhang, Y. ; Sun, Y.

Author_Institution

Univ. of Toronto, Toronto, ON, Canada

fYear

2011

fDate

5-9 June 2011

Firstpage

2582

Lastpage

2585

Abstract

The characterization of electrical properties of individual nanowires/nanotubes inside scanning electron microscopes has been demonstrated. However, the effect of electron-beam irradiation on the characterization results is not clearly known. Using a MEMS device we developed for the electromechanical characterization of nanowires, this study reveals that electron irradiation significantly alters the measured current-voltage characteristics of nanowire specimens. Single silicon nanowires are characterized using this MEMS device. The electron irradiation effect is quantified.

Keywords

electromechanical effects; electron beam effects; micromechanical devices; nanowires; scanning electron microscopes; semiconductor nanotubes; MEMS device; electron-beam irradiation effect; nanotube electrical properties; nanowire electrical properties; nanowire electromechanical characterization; scanning electron microscope; single silicon nanowire; Micromechanical devices; Nanowires; Radiation effects; Scanning electron microscopy; Silicon; Strain; Electrical characterization; electromechanical characterization; electron microscopy; electron-beam irradiation; single nanowires;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Conference_Location

Beijing

ISSN

Pending

Print_ISBN

978-1-4577-0157-3

Type

conf

DOI

10.1109/TRANSDUCERS.2011.5969825

Filename

5969825