DocumentCode :
2541173
Title :
An analytical surface potential model for pocket implanted Sub-100 nm n-MOSFET
Author :
Bhuyan, Muhibul Haque ; Khosru, Quazi D M
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Daffodil Int. Univ., Dhaka
fYear :
2008
fDate :
20-22 Dec. 2008
Firstpage :
442
Lastpage :
446
Abstract :
This paper presents an analytical surface potential model for pocket implanted sub-100 nm n-MOSFET. The model is derived by solving the Poissonpsilas equation in the depletion region at the surface with the appropriate boundary conditions at source and drain. The model includes the effective doping concentration of the two linear pocket profiles at the source and drain sides of the device. The model also incorporates the drain and substrate bias effect below and above threshold conditions. The simulation results show that the derived surface potential model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.
Keywords :
MOSFET; doping profiles; semiconductor device models; semiconductor doping; surface potential; ULSI; analytical surface potential model; boundary conditions; depletion region; doping concentration; linear pocket profiles; pocket implanted n-MOSFET; Analytical models; Boundary conditions; Doping profiles; Implants; MOSFET circuits; Medical simulation; Poisson equations; Semiconductor process modeling; Threshold voltage; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-2014-8
Electronic_ISBN :
978-1-4244-2015-5
Type :
conf
DOI :
10.1109/ICECE.2008.4769248
Filename :
4769248
Link To Document :
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