C-V characteristics of n-channel double gate MOS structures incorporating the effect of interface states

Author

Alam, A. ; Ahmed, S. ; Alam, M.K. ; Khosru, Quazi D M

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka

fYear

2008

fDate

20-22 Dec. 2008

Firstpage

456

Lastpage

459

Abstract

The Capacitance-Voltage (CV) characteristics of n-channel Double Gate (DG) MOS structures are investigated. An accurate and efficient fully coupled 1-D Schrodinger-Poisson self-consistent solver has been used. The numerical solver employs finite element method to calculate different electrostatics of n-channel DGMOS structures. The CV characteristics are modeled by taking the effect of interface trapped charges into account for varying densities of interface states. Both high frequency (HF) and low frequency (LF) operations are considered.

Keywords

MIS devices; Poisson equation; Schrodinger equation; finite element analysis; interface states; semiconductor device models; 1-D Schrodinger-Poisson self-consistent solver; capacitance-voltage characteristics; electrostatics; finite element method; interface states; n-channel double gate MOS structures; Capacitance-voltage characteristics; Electrostatics; Finite element methods; Frequency; Interface states; MOS devices; Poisson equations; Quantum mechanics; Schrodinger equation; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4244-2014-8

Electronic_ISBN

978-1-4244-2015-5

Type

conf

DOI

10.1109/ICECE.2008.4769251

Filename

4769251