InxGa1-xN based multi junction concentrator solar cell

Author

Islam, Md Sherajul ; Rahman, A. K M Zillur ; Chowdhury, Md A R ; Islam, Md Rafiqul ; Bhuiyan, Ashraful G.

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol. (KUET), Khulna

fYear

2008

fDate

20-22 Dec. 2008

Firstpage

578

Lastpage

581

Abstract

In this paper, the In_xGa_1-xN based multi junction solar cell under concentrator has been designed theoretically and the performances are evaluated. The consequence of increasing the concentration ratio up to 500 suns and the number of junctions up to 8 are predicted. A relative comparison of efficiency with and without concentrator has also been studied. The efficiency of In_xGa_1-xN-based single junction, triple junction, and eight junction solar cells without employing concentrator were found to be 24.67, 37.57, and 46.15% respectively, while those using concentrator have been improved to 41.07, 46.92 and 50.41% respectively.

Keywords

III-V semiconductors; gallium compounds; indium compounds; solar cells; solar energy concentrators; wide band gap semiconductors; In_xGa_1-xN; multijunction solar cell; solar concentrator; Costs; Design engineering; Optical materials; Performance evaluation; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Semiconductor materials; Solar power generation; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4244-2014-8

Electronic_ISBN

978-1-4244-2015-5

Type

conf

DOI

10.1109/ICECE.2008.4769276

Filename

4769276