Title :
Constant transconductance bias circuit with an on-chip resistor
Author :
Talebbeydokhti, Nema ; Hanumolu, Pavan Kumar ; Kurahashi, Peter ; Moon, Un-Ku
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR
Abstract :
A method to generate stable transconductance (gm) without using precise external components is presented. The off-chip resistor in a conventional constant-gm bias circuit is replaced with a variable on-chip resistor. A MOSFET biased in triode region is used as a variable resistor. The resistance of the MOSFET is tuned by a background tuning scheme to achieve the stable transconductance that is immune to process, voltage and temperature variation. The transconductance generated by the constant-gm bias circuit designed in 0.18mum CMOS process with 1.5F supply displays less than 1% variation for a 20% change in power supply voltage and less than plusmn1.5% variation for a 60degC change in temperature. The whole circuit draws approximately 850muA from a supply
Keywords :
CMOS integrated circuits; circuit tuning; resistors; 0.18 micron; 1.5 F; 1.5 V; CMOS process; MOSFET; background tuning scheme; constant bias circuit; constant transconductance bias circuit; off-chip resistor; on-chip resistor; variable resistor; CMOS process; Circuit optimization; Displays; MOSFET circuits; Power generation; Power supplies; Resistors; Temperature; Transconductance; Voltage;
Conference_Titel :
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location :
Island of Kos
Print_ISBN :
0-7803-9389-9
DOI :
10.1109/ISCAS.2006.1693220
