Constant transconductance bias circuit with an on-chip resistor

Author

Talebbeydokhti, Nema ; Hanumolu, Pavan Kumar ; Kurahashi, Peter ; Moon, Un-Ku

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR

fYear

2006

fDate

21-24 May 2006

Lastpage

2860

Abstract

A method to generate stable transconductance (g_m) without using precise external components is presented. The off-chip resistor in a conventional constant-g_m bias circuit is replaced with a variable on-chip resistor. A MOSFET biased in triode region is used as a variable resistor. The resistance of the MOSFET is tuned by a background tuning scheme to achieve the stable transconductance that is immune to process, voltage and temperature variation. The transconductance generated by the constant-g_m bias circuit designed in 0.18mum CMOS process with 1.5F supply displays less than 1% variation for a 20% change in power supply voltage and less than plusmn1.5% variation for a 60degC change in temperature. The whole circuit draws approximately 850muA from a supply

Keywords

CMOS integrated circuits; circuit tuning; resistors; 0.18 micron; 1.5 F; 1.5 V; CMOS process; MOSFET; background tuning scheme; constant bias circuit; constant transconductance bias circuit; off-chip resistor; on-chip resistor; variable resistor; CMOS process; Circuit optimization; Displays; MOSFET circuits; Power generation; Power supplies; Resistors; Temperature; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on

Conference_Location

Island of Kos

Print_ISBN

0-7803-9389-9

Type

conf

DOI

10.1109/ISCAS.2006.1693220

Filename

1693220