DocumentCode :
2542697
Title :
A Unified Switching Model for VSC Validated by IGCTs and IGBTs
Author :
Zichao, Fan ; Wenhua, Liu ; Qiang, Song
Author_Institution :
Department of Electrical Engineering, Tsinghua University, Beijing, CHINA. Email: fzc03@mails.tsinghua.edu.cn
fYear :
2007
fDate :
Feb. 25 2007-March 1 2007
Firstpage :
1485
Lastpage :
1488
Abstract :
With the continuous improvement of reliability requirements, studying the power switches´ characteristics is of great significance in high-power electrical device. This paper presents a unified switching model suitable for the simulation of switching process with many kinds of switches in a large class of voltage sourced converter (VSC) systems. The model has many advantages such as simulating many switching dynamics states synchronously with less calculation, high simulation speed and easy parameter extraction from datasheets or measured waveforms. The model is also useful in selecting power switches, designing RCD snubbers, evaluating power loss, determining dead time and etc. The accuracy of the model is validated by comparing the experimental results with simulation ones for an IGCT-based VSC and an IGBT-based VSC.
Keywords :
Continuous improvement; Insulated gate bipolar transistors; Parameter extraction; Power conversion; Power system modeling; Power system reliability; Switches; Switching converters; Velocity measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference, APEC 2007 - Twenty Second Annual IEEE
Conference_Location :
Anaheim, CA, USA
ISSN :
1048-2334
Print_ISBN :
1-4244-0713-3
Type :
conf
DOI :
10.1109/APEX.2007.357713
Filename :
4195916
Link To Document :
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