A Unified Switching Model for VSC Validated by IGCTs and IGBTs

Author

Zichao, Fan ; Wenhua, Liu ; Qiang, Song

Author_Institution

Department of Electrical Engineering, Tsinghua University, Beijing, CHINA. Email: fzc03@mails.tsinghua.edu.cn

fYear

2007

fDate

Feb. 25 2007-March 1 2007

Firstpage

1485

Lastpage

1488

Abstract

With the continuous improvement of reliability requirements, studying the power switches´ characteristics is of great significance in high-power electrical device. This paper presents a unified switching model suitable for the simulation of switching process with many kinds of switches in a large class of voltage sourced converter (VSC) systems. The model has many advantages such as simulating many switching dynamics states synchronously with less calculation, high simulation speed and easy parameter extraction from datasheets or measured waveforms. The model is also useful in selecting power switches, designing RCD snubbers, evaluating power loss, determining dead time and etc. The accuracy of the model is validated by comparing the experimental results with simulation ones for an IGCT-based VSC and an IGBT-based VSC.

Keywords

Continuous improvement; Insulated gate bipolar transistors; Parameter extraction; Power conversion; Power system modeling; Power system reliability; Switches; Switching converters; Velocity measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference, APEC 2007 - Twenty Second Annual IEEE

Conference_Location

Anaheim, CA, USA

ISSN

1048-2334

Print_ISBN

1-4244-0713-3

Type

conf

DOI

10.1109/APEX.2007.357713

Filename

4195916