Dielectric study of hafnium oxide thin film annealed in oxygen and deposited using RF sputtering system having MIM configuration

Author

Srivastava, A. ; Nahar, R.K. ; Sarkar, C.K. ; Gupta, Vinay

Author_Institution

Electr. & Electron. Eng. Dept., BITS Pilani, Pilani

fYear

2008

fDate

20-22 Dec. 2008

Firstpage

838

Lastpage

841

Abstract

The dielectric study of HfO₂ thin films deposited on the platinized silicon substrate using RF-sputtering deposition technique have been carried out in the metal-insulator-metal (MIM) configuration over a wide temperature (300 to 500 K) and frequency (100 Hz to 1 MHZ) ranges. The film were deposited at pre-optimized sputtering voltage of 0.8 kV, substrate bias of 80 volt and annealing temperature of 700degC in oxygen in order to get best results for the oxide charges and the leakage current as a MOS capacitor. The crystallographic structure of the deposited films were investigated using X-ray diffraction and the microstructure of the thin film is examined by SEM.

Keywords

X-ray diffraction; annealing; crystal structure; dielectric thin films; hafnium compounds; leakage currents; scanning electron microscopy; sputter deposition; HfO₂; MOS capacitor; RF sputtering system; SEM; X-ray diffraction; annealing; crystallographic structure; frequency 100 Hz to 1 MHz; hafnium oxide thin film; leakage current; metal-insulator-metal configuration; microstructure; oxygen; platinized silicon substrate; preoptimized sputtering voltage; temperature 300 K to 700 K; voltage 80 V to 0.8 kV; Annealing; Dielectric substrates; Dielectric thin films; Hafnium oxide; Metal-insulator structures; Radio frequency; Semiconductor thin films; Silicon; Sputtering; Temperature distribution; Conductivity; Dielectric loss; MIM capacitor; high-κ dielectric;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4244-2014-8

Electronic_ISBN

978-1-4244-2015-5

Type

conf

DOI

10.1109/ICECE.2008.4769327

Filename

4769327