• DocumentCode
    2542913
  • Title

    An overview of twin-flash technology

  • Author

    Stein, E.G. ; Kamienski, V. ; Isler, M. ; Mikolajick, T. ; Ludwig, C. ; Schulze, N. ; Nagel, N. ; Riedel, S. ; Willer, J. ; Küster, K.H.

  • Author_Institution
    Infineon Technol., Dresden
  • fYear
    2005
  • fDate
    10-10 Nov. 2005
  • Firstpage
    5
  • Lastpage
    10
  • Abstract
    The twin-flash cell technology relies on the charge trapping storage concept. The concept is described. The fabrication of the technology nodes ranges from 170 nm to 90 nm. The realization of the concept in different cell types is described. The shrink path beyond the 40 nm node is shown and discussed
  • Keywords
    flash memories; hot carriers; 170 to 90 nm; channel hot electron injection; charge trapping storage; hot hole injection; twin-flash cell technology; Channel hot electron injection; Charge carrier processes; Costs; Digital cameras; Electron traps; Fabrication; Hot carriers; Programming profession; Smart phones; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium, 2005
  • Conference_Location
    Dallas, TX
  • Print_ISBN
    0-7803-9408-9
  • Type

    conf

  • DOI
    10.1109/NVMT.2005.1541378
  • Filename
    1541378
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2542913