A study on off-state leakage current characteristics of asymmetric-metal-oxide-semiconductor field-effect transistors

We extract the off-state current component from the asymmetric transistors in short channel 40nm DRAM and know that subthreshold current was a major factor. Through a comparison of high doped drain and shallow low doped drain, the main factor is still subthreshold current. The difference between high doped drain and low doped drain for quantitative analysis of the were explained by differences in off-state current. This asymmetric MOSFETs lowers DIBL by using the shallow low doped drain junction. Depending on the doping concentration and depth of the differences affect electric-filed, is reduced in the shallow doped drain junction by decreasing electric-field. Therefore, we will analyze the HCE (hot carrier effect) characteristics.