Title :
Integrated silicon on insulator-ferroelectric capacitor process for radiation hard non volatile universal memory applications
Author :
Joshi, Vikram ; Ohno, Morifumo ; Ida, Jiro ; Nagatomo, Yoshiki ; Strauss, Karl
Author_Institution :
Symetrix Semicond. Corp., Palo Alto, CA
Abstract :
We report for the first time the successful integration of strontium-bismuth-tantalate ferroelectric capacitors on an SOI substrate. We have verified that the unique processing requirements of SBT capacitors do not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors
Keywords :
bismuth compounds; ferroelectric capacitors; ferroelectric storage; radiation hardening (electronics); random-access storage; silicon-on-insulator; strontium compounds; FD-SOI transistors; SOI substrate; nonvolatile universal memory; radiation hard; silicon on insulator-ferroelectric capacitor process; strontium-bismuth-tantalate ferroelectric capacitors; Capacitors; Ferroelectric materials; Insulation; Laboratories; NASA; Plugs; Propulsion; Silicon on insulator technology; Substrates; Testing;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2005
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-9408-9
DOI :
10.1109/NVMT.2005.1541389
