Author :
Ninomiya, S. ; Okamoto, Y. ; Kimura, Y. ; Ochi, A. ; Ueno, Y. ; Yamada, T. ; Kudo, T. ; Suetsugu, N. ; Koike, M. ; Sato, F. ; Tsukihara, M. ; Fuse, G. ; Ueno, K. ; Sugitani, M.
Abstract :
The MIND+ system was introduced as an advanced yield enhancement method. MIND+ is an extension of the previous MIND system and is backwards compatible with all MIND capabilities. The existing MIND system is in use by multiple volume fabrication lines and is successfully producing higher yields and lower device variation. The MIND+ system provides a significant enhancement based on the ability to produce more complex two-dimensional intentionally non-uniform dose patterns with a single-step implant. Such patterns previously required either step-wise rotational implants using the MIND system or were not possible at all. The MIND+ system provides a powerful tool that allows process designers to compensate for variations induced by other semiconductor process steps.
Keywords :
ion implantation; semiconductor devices; MIND+ system; complex two-dimensional intentionally nonuniform dose patterns; device variation; semiconductor process steps; semiconductor volume fabrication lines; single-step ion implantation; yield enhancement method; Conferences; Fuses; Implants; Ion beams; Ion implantation; Junctions; Resistance;
