Modeling of advanced ion implantation technologies in semiconductors

The demanding requirements for low power devices are stimulating new technological schemes. Cluster and cold implants have arisen as new strategies for dopant incorporation oriented to the formation of amorphous regions with reduced end-of-range defects. In this work we have used different atomistic simulation techniques to study the phenomena involved in these types of implant. The basis for the enhancement of amorphization in cluster implants is the increase of damage formation by a cooperative effect of multiple simultaneous atoms, while cold implants favor damage accumulation by increasing the lifetime of generated damage. We have also characterized the influence of Si surface on damage generation and recombination. We have found that in the vicinity of the surface damage generation is enhanced and generated damage is more stable than in bulk. As a result the amorphization threshold dose is reduced in ultra-low energy implants and the regrowth of ultra-thin body Si devices becomes more difficult.