DocumentCode :
2543188
Title :
The endurance performance of 0.5/spl mu/m FRAM products
Author :
Chu, Fan ; Davenport, Tom
Author_Institution :
Ramtron Int. Corp., Colorado Springs, CO
fYear :
2005
fDate :
10-10 Nov. 2005
Lastpage :
47
Abstract :
Ferroelectric random access memories (FRAMs) are nonvolatile memory devices that store data by using the bistable switchable polarization state of a ferroelectric material. Ferroelectric thin films exhibit the hysteresis effect of polarization versus applied electrical field (P-E hysteresis loop) to realize its nonvolatile storage capability. FRAM is also known for its high endurance, a fast write speed, and low power consumption. Endurance is defined as the ability of the device to sustain switchable polarization after many switching cycles. It is one of the critical performance characteristics for FRAM applications. Due to the high endurance of FRAM devices, evaluating the endurance behavior in a reasonable amount of time becomes difficult
Keywords :
ferroelectric storage; ferroelectric thin films; hysteresis; random-access storage; 0.5 micron; P-E hysteresis loop; bistable switchable polarization state; electrical field; ferroelectric material; ferroelectric random access memories; ferroelectric thin films; hysteresis effect; nonvolatile memory devices; Capacitors; Fatigue; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Testing; Transistors; Zero voltage switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2005
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-9408-9
Type :
conf
DOI :
10.1109/NVMT.2005.1541392
Filename :
1541392
Link To Document :
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