Design, simulation and application of a novel compound MOSFET for emerging CMOS technology

An Active-Region-Cutout (ARC) technique was developed and applied to an enclosed poly MOS device to overcome shorted source-drain issue. This novel transistor is named as Active-Region-Cutout-Transistor (ARCT). This transistor is simulated and found to be very tolerant to inner-device interferences in harsh environments such as radiation and electromagnetic fields. ARC technique has an advantage of making MOSFETs with more than three terminals and thus forming a compound MOSFET. The gate poly extension was made through the unipotential electrode of the active region of drain to reduce effects of interferences even further. Two types of CMOS circuits have been studied by replacing transistors with the compound ARCTs.