Active-region-cutout-enclosed-layout-transistor device applications in electronics

ARC technique was developed and latter a HBD ELT was modified with ARCs. The new MOSFET was called ARCELT, which contains three electrodes and thus it became a compound MOSFET having three transistors within it. Relationship between transistors in ARCELT and ARCs is established. The effective area of each transistor reduced to almost 33% of ELT. Some special application techniques of ARCELT in electronic circuits are studied and implemented. Technique to calculate and control device aspect ratio, W/L is found to approximate the value. Special technique is needed to make equivalent device of the ARCELT for SPICE circuit simulation. ARCELT reduces electronic circuit´s size; thus saves silicon space and improves IC´s design density.