Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs

The impact of a few dopant positions on transconductance has been experimentally investigated by evaluating FETs with asymmetric discrete ordered dopant distribution and random dopant distribution by employing SII technique. We found that g_m is the largest when a few dopants are located at drain side in an ordered dopant distribution, and the electron transport is sensitive to the individual dopant location. These results indicate that controlling of individual dopant position could enhance device performances, and thus could contribute to extend doped-channel devices, which are necessary for controlling discrete dopant number and position ultimately.