• DocumentCode
    2543360
  • Title

    Cold (−100°C) carbon co-implantation into high phosphorus doping source/drain extensions for aggressively scaled NFETs

  • Author

    Yako, Koichi ; Fujiwara, Makoto ; Bu, Huiming

  • Author_Institution
    Renesas Electron., Albany, NY, USA
  • fYear
    2011
  • fDate
    9-10 June 2011
  • Firstpage
    77
  • Lastpage
    79
  • Abstract
    A -100°C carbon co-implantation into phosphorus-doped source/drain extensions has been developed, providing for low junction leakage. NFETs made using cold carbon co-implantation and ultra-low energy phosphorus ion implantation showed high activation (Rs~ 500 ohm/sq) and sub-20 nm depth abrupt N+ junction.
  • Keywords
    field effect transistors; C; N+ junction; aggressive scaled NFET; cold carbon coimplantation; high phosphorus doping source-drain extension; size 20 nm; temperature -100 degC; Annealing; Boron; Carbon; Conferences; Implants; Junctions; Logic gates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2011 11th International Workshop on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-61284-131-1
  • Type

    conf

  • DOI
    10.1109/IWJT.2011.5970004
  • Filename
    5970004
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2543360