DocumentCode :
2543374
Title :
Doping technology: An effective way to improve the performances of resistive switching memory
Author :
Liu, Qi ; Liu, Ming ; Wang, Yan ; Lv, Hangbing ; Long, Shingbing ; Wang, Wei
Author_Institution :
Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad., Beijing, China
fYear :
2011
fDate :
9-10 June 2011
Firstpage :
80
Lastpage :
83
Abstract :
Doping technology is an effective method for modulating and improving the RRAM´s performances. Generally, the doped BMO films exhibit much more preferred memory properties, including free-electroforming process, low operation voltage, good electrical uniformity and high device yield. In order to effectively improve the RRAM device performances by doping, more works need to do for understanding the physical mechanism and the inherent laws.
Keywords :
doping; low-power electronics; random-access storage; thin films; RRAM; binary metal oxide; doped BMO films; doping technology; electrical uniformity; free-electroforming process; low operation voltage; memory properties; resistive switching memory; Copper; Doping; Films; Impurities; Ions; Performance evaluation; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-61284-131-1
Type :
conf
DOI :
10.1109/IWJT.2011.5970005
Filename :
5970005
Link To Document :
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