DocumentCode
2543392
Title
New combination of damage control techniques using SEN´s single-wafer implanters
Author
Ninomiya, S. ; Hirokawa, S. ; Sato, F. ; Okamoto, Y. ; Yumiyama, T. ; Inai, K. ; Funai, A. ; Shinozuka, M. ; Kato, K. ; Ishikawa, M. ; Ebisu, S. ; Kudo, T. ; Kagawa, T. ; Fukui, T. ; Morita, T. ; Suetsugu, N. ; Tsukihara, M. ; Fuse, G. ; Ueno, K.
Author_Institution
SEN Corp., Saijo, Japan
fYear
2011
fDate
9-10 June 2011
Firstpage
88
Lastpage
91
Abstract
New damage control techniques, Cryo Implant and WBS Implant, are introduced for SEN single-wafer ion implanters. Using amorphous layer thickness as a gauge, both techniques are shown to be useful and almost equivalent. The ability to optimize device performance and tool productivity by simultaneously adjusting both parameters is shown to be a significant advantage for the SEN hybrid beam line design.
Keywords
ion implantation; Cryo Implant; SEN; WBS Implant; amorphous layer; damage control techniques; gauge; single-wafer ion implanters; Frequency control; Implants; Ion implantation; Productivity; Temperature control; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location
Kyoto
Print_ISBN
978-1-61284-131-1
Type
conf
DOI
10.1109/IWJT.2011.5970006
Filename
5970006
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