Title :
Delta-doping of boron by photo-excited CVD
Author_Institution :
Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
Abstract :
From the past years, doping of impurity atoms has been one of the crucial issues in semiconductor technologies. Recent development in metal-oxide-semiconductor (MOS) transistors that are densely integrated on a wafer surface in ULSI urges doping in a very confined region, which is currently investigated as shallow doping. The representative process tools include plasma and cluster ion beam doping. Although the concept of delta doping, where a high-density doped layer is embedded in a Si crystal, was proposed 20 years ago, research activities have been limited. However, delta doping is certainly a key element for three-dimensional integration of MOS transistor units. Also, advanced electron devices based on vertical transport between delta-doped layers may be realized in the future.
Keywords :
boron; elemental semiconductors; photoexcitation; plasma CVD; semiconductor doping; silicon; Si; Si:B; ULSI; advanced electron device; chemical vapor deposition; cluster ion beam doping; delta doping; high-density doped layer; impurity atom; metal oxide semiconductor transistor; photoexcited CVD; semiconductor technology; shallow doping; silicon crystal; three-dimensional MOS transistor unit integration; wafer surface; Atomic layer deposition; Boron; Films; Photonics; Silicon; Substrates; Trajectory;
Conference_Titel :
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-61284-131-1
DOI :
10.1109/IWJT.2011.5970010
