Formation of shallow p+/n junction in silicon by non-melt laser annealing

In this work, shallow p⁺/n junction was formed by annealing the implanted samples (prepared by Ge preamorphization implantation (Ge-PAI) and low energy B implantation) with non-melt laser annealing process using two different laser sources, i.e. excimer laser, KrF and green laser in order to compare the dopant diffusion, activation and regrowth of implanted layer. Experimental results show that remarkable boron diffusion occurred during annealing of the samples subjected to KrF laser annealing with a very short annealing time. Only slight diffusion of boron at the tail region is observed in the samples subjected green laser annealing. We considered that the penetration depth and pulse duration are the important factors that may cause the difference in boron diffusion during annealing process.