Investigations on nonvolatile and nonrotational phase change random access memory

Author

Shi, L.P. ; Chong, T.C. ; Zhao, R. ; Li, J.M. ; Tan, P.K. ; Miao, X.S. ; Wang, W.J. ; Lee, H.K. ; Wei, X.Q. ; Yang, H.X. ; Lim, K.G. ; Song, W.D.

Author_Institution

Data Storage Inst., Singapore

fYear

2005

fDate

10-10 Nov. 2005

Lastpage

120

Abstract

In this work, phase change random access memory (PCRAM) was studied theoretically and experimentally. Phase change materials were deposited and their physical parameters were measured. A simulation and design software for PCRAM was developed based on multidisciplinary theories including electrodynamics, thermal conduction, crystallization kinetics and numerical computations. By introducing physical models of PCRAM elements, a general macromodel of the phase change random access memory (PCRAM) elements for HSPICE-based computer simulator is proposed. PCRAM array were designed, fabricated, and tested by using a self built tester. Also, near field optical scan microscope incorporated with fs laser was used to fabricate nano scale PCRAM cells

Keywords

built-in self test; integrated circuit modelling; phase change materials; random-access storage; crystallization kinetics; electrodynamics; nanoscale PCRAM cells; near field optical scan microscope; nonrotational random access memory; nonvolatile random access memory; phase change materials; self built tester; thermal conduction; Automatic testing; Computational modeling; Electrodynamics; Nonvolatile memory; Optical microscopy; Phase change materials; Phase change random access memory; Phase measurement; Software design; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium, 2005

Conference_Location

Dallas, TX

Print_ISBN

0-7803-9408-9

Type

conf

DOI

10.1109/NVMT.2005.1541416

Filename

1541416