Strong electron correlation effects in non-volatile electronic memory devices

Author

Inou, Isao H. ; Rozenberg, M.J. ; Yasuda, S. ; Sanchez, M.J. ; Yamazaki, M. ; Manago, T. ; Akinaga, H. ; Takagi, H. ; Akoh, H. ; Tokura, Y.

Author_Institution

Correlated Electron Res. Center, National Inst. of Adv. Ind. Sci. & Technol., Tsukuba

fYear

2005

fDate

10-10 Nov. 2005

Lastpage

136

Abstract

We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transition due to strong electron correlations at the semiconductor/metal interface. We have also prepared experimentally a Pt/NiO/Pt test device and have observed the resistance switching. The calculated results of the DT model are compared to the experimental results, manifesting that this sandwich structure could be the realisation of a novel strongly correlated electron device

Keywords

metal-semiconductor-metal structures; random-access storage; semiconductor-metal boundaries; Pt-NiO-Pt; correlated electron device; domain-tunneling model; metal-insulator transition; metal-semiconductor-metal sandwich structures; nonvolatile electronic memory devices; resistance switching phenomenon; semiconductor-metal interface; Charge carrier density; Electric resistance; Electrons; Industrial electronics; Inorganic materials; Materials science and technology; Memory management; Metal-insulator structures; Nonvolatile memory; Sandwich structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium, 2005

Conference_Location

Dallas, TX

Print_ISBN

0-7803-9408-9

Type

conf

DOI

10.1109/NVMT.2005.1541421

Filename

1541421