Novel traveling wave-HPT technology with integrated polyimide optical waveguides

Author

Scott, D.C. ; Prakash, D.P. ; Wang, W. ; Jalali, Bahram ; Fetterman, H.R.

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

101

Abstract

In realizing efficient heterojunction phototransistors (HPTs), classic design conflicts arise between the simultaneous optimization of high-frequency performance and optical coupling efficiency. In this paper, we propose to resolve these issues by utilizing a novel traveling wave AlInAs-InGaAs HPT (TW-HPT) configuration in which optical power transfer occurs along the sides of the device from a polyimide channel waveguide. Unlike p-i-n or MSM traveling wave implementations, this structure has gain at the IF frequencies.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optics; optical communication equipment; optical polymers; optical waveguides; phototransistors; AlInAs-InGaAs; IF frequencies; design conflicts; heterojunction phototransistors; high-frequency performance; integrated polyimide optical waveguides; optical coupling efficiency; optical power transfer; polyimide channel waveguide; traveling wave AlInAs-InGaAs HPT; traveling wave-HPT technology; Design optimization; Frequency; Heterojunctions; Optical coupling; Optical design; Optical devices; Optical waveguides; PIN photodiodes; Phototransistors; Polyimides;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571570

Filename

571570