Parasitic BJT versus DIBL: Floating-body-related subthreshold characteristics of SOI NMOS device

This paper reports the subthreshold characteristics of the SOI NMOS device considering the floating body effects. As verified by the experimentally measured data, as the channel length is scaled down from 1μm to 120nm, the subthreshold slope is steeper as a result of the dominance of the parasitic BJT in the thin film. For the channel length further scaled down to 60nm, its subthreshold behavior is less steep owing to the dominance of the DIBL effect in the MOS channel region and the shrunk parasitic BJT in the thin film as confirmed by the 2D hole concentration contours in the thin film and the conduction band potential distribution in the lateral channel region.