A study of the effects of thermal oxidation and hydrogen passivation on CVD polysilicon pin solar cells using DLTS

Author

Moore, Chad B. ; Ast, Dieter G.

Author_Institution

Dept. of Mater. Sci. & Eng., Cornell Univ., Ithaca, NY, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

853

Abstract

The effects of multiple oxidations of a thin polycrystalline silicon seed layer on the structure and electronic properties of a subsequently grown thick polysilicon films are investigated. A direct correlation is observed between the number of initial thermal oxidations of the seed layer, the cell efficiency, and the relative concentration of majority carrier traps. During hydrogenation, the majority carrier trap disappears and the minority carrier capture cross-section decreases from 3×10^-13 to 8×10^-15/cm². The activation energy of this trap is 0.45 eV before hydrogenation, decreases to 0.35 eV after 17 min of hydrogenation, and increases to 0.42 eV after 60 min

Keywords

CVD coatings; deep level transient spectroscopy; elemental semiconductors; minority carriers; oxidation; passivation; silicon; solar cells; CVD; DLTS; H₂ passivation; Si solar cells; activation energy; chemical vapour deposition; deep level transient spectroscopy; efficiency; electronic properties; hydrogenation; majority carrier traps; minority carrier capture cross-section; pin solar cells; semiconductor; structural properties; thermal oxidations; thin polycrystalline seed layer; Amorphous silicon; Electron traps; Grain boundaries; Grain size; Hydrogen; Oxidation; Passivation; Photovoltaic cells; Semiconductor films; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169330

Filename

169330