Title :
Large area polycrystalline silicon sheets by Hoxan cast ribbon process
Author :
Hatanaka, Y. ; Ishikawa, N. ; Suzuki, M. ; Suzuki, T. ; Moritani, T. ; Hide, I.
Author_Institution :
Hoxan Corp., Hokkaido, Japan
Abstract :
Large-area polycrystalline silicon sheets (width: 200 mm; thickness: 0.3 mm) were produced directly from molten silicon by the HCR (Hoxan cast ribbon) process. This process was developed for low-cost solar cells. In order to produce large-area silicon sheets, large mold modules with 200 mm wide cavities were prepared, and new equipment was constructed. The thickness of the silicon sheet was 0.3 mm, the grain size was 2-3 mm, and its structure was dendritic. Solar cells were fabricated using 100 mm×100 mm sheets which were obtained from 200 mm wide sheets. Their efficiency was over 10%
Keywords :
crystal growth from melt; elemental semiconductors; grain size; semiconductor growth; silicon; solar cells; Hoxan cast ribbon process; Si solar cells; dendritic structure; grain size; large mold modules; large-area polycrystalline sheets; semiconductor; Annealing; Costs; Crystals; Grain size; Laboratories; Photovoltaic cells; Production; Silicon; Surface treatment; Thermal stresses;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169331