Performance enhancement of AlGaN/GaN based UV laser diode for short-λ optical communication

Author

Khazir, M. ; Raja, M. Yasin Akhtar ; Shah, Attaullah ; Mahmood, Arshad

Author_Institution

Dept. of Phys. & Opt. Sci., Univ. of North Carolina at Charlotte, Charlotte, NC, USA

fYear

2010

fDate

19-21 Dec. 2010

Firstpage

101

Lastpage

106

Abstract

Qualitative optimization of the InAlN as electron-block layer (EBL) has been studied. Analytical comparisons of AlGaN and modified InAlN as EBLs have been performed. Using 2D simulation, significant improvement in the emission intensity of the designed structures with In_0.18Al_0.82N EBLs compared to similar with non-EBL and Al_0.8Ga_0.82N as EBL is observed. This enhancement can be attributed to the fact that modified EBL is more efficient in electron confinement and reduces the efficiency droop caused by carrier spillover into p-region.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; optical communication equipment; semiconductor lasers; tunnelling; wide band gap semiconductors; 2D simulation; AlGaN-GaN; UV laser diode; carrier spillover; electron confinement; electron-block layer; emission intensity; short-λ optical communication; Aluminum gallium nitride; Diode lasers; Gallium nitride; Materials; Optical refraction; Optical variables control; Photonic band gap; AlGaN; InAlN; UV laser diode; elctron-block layer(EBL); nitrigen vacancy; superlattice; tunneling barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

High-Capacity Optical Networks and Enabling Technologies (HONET), 2010

Conference_Location

Cairo

Print_ISBN

978-1-4244-9922-9

Type

conf

DOI

10.1109/HONET.2010.5715753

Filename

5715753