DocumentCode
2544913
Title
Yield projection from defect monitors: the influence of gross defects [BiCMOS process]
Author
Harrison, Neil
Author_Institution
Northern Telecom Electron. Ltd., Nepean, Ont., Canada
fYear
1995
fDate
13-15 Nov 1995
Firstpage
146
Lastpage
154
Abstract
Accurate yield projection requires an appreciation of the role of gross or area defects. Yield projection from defect monitors can only be successful if the presence of gross defects is handled correctly. This paper presents a technique for the identification of such defects and quantifies the effect on projected yield of varying the criterion for distinguishing gross defects from a cluster of point defects
Keywords
BiCMOS integrated circuits; VLSI; integrated circuit yield; production testing; BiCMOS process; VLSI; area defects; defect monitors; gross defects; yield projection; BiCMOS integrated circuits; Capacitors; Condition monitoring; Fabrication; Probes; Product codes; Telecommunications;
fLanguage
English
Publisher
ieee
Conference_Titel
Defect and Fault Tolerance in VLSI Systems, 1995. Proceedings., 1995 IEEE International Workshop on,
Conference_Location
Lafayette, LA
ISSN
1550-5774
Print_ISBN
0-8186-7107-6
Type
conf
DOI
10.1109/DFTVS.1995.476947
Filename
476947
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