Title :
Yield projection from defect monitors: the influence of gross defects [BiCMOS process]
Author_Institution :
Northern Telecom Electron. Ltd., Nepean, Ont., Canada
Abstract :
Accurate yield projection requires an appreciation of the role of gross or area defects. Yield projection from defect monitors can only be successful if the presence of gross defects is handled correctly. This paper presents a technique for the identification of such defects and quantifies the effect on projected yield of varying the criterion for distinguishing gross defects from a cluster of point defects
Keywords :
BiCMOS integrated circuits; VLSI; integrated circuit yield; production testing; BiCMOS process; VLSI; area defects; defect monitors; gross defects; yield projection; BiCMOS integrated circuits; Capacitors; Condition monitoring; Fabrication; Probes; Product codes; Telecommunications;
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems, 1995. Proceedings., 1995 IEEE International Workshop on,
Conference_Location :
Lafayette, LA
Print_ISBN :
0-8186-7107-6
DOI :
10.1109/DFTVS.1995.476947
