DocumentCode
2545027
Title
A high temperature and low power SOI CMOS MEMS based thermal conductivity gas sensor
Author
Sarfraz, Sohab ; Kumar, R. Vintoh ; Udrea, F.
Author_Institution
Dept. of Mater. Sci. & Metall., Univ. of Cambridge, Cambridge, UK
Volume
1
fYear
2013
fDate
14-16 Oct. 2013
Firstpage
51
Lastpage
54
Abstract
The design, 3D FEM modelling and measurement results of a novel high temperature, low power SOI CMOS MEMS thermal conductivity gas sensor are presented here. The sensor consists of a circular membrane with an embedded tungsten micro-heater. The high sensing capability is based on the temperature sensitivity of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm2. The circular membrane has a 600 μm diameter while the heating element has a 320 μm diameter. Measurement results show that for a constant power consumption of 75 mW the heater temperature was 562.4 °C in air, 565.9 °C in N2, 592.5 °C for 1 % H2 in Ar and 599.5 °C in Ar.
Keywords
CMOS integrated circuits; finite element analysis; gas sensors; heating; microsensors; silicon-on-insulator; thermal conductivity; tungsten; 3D FEM modelling; H2; N2; SOI CMOS MEMS; circular membrane; high sensing capability; power 75 mW; power consumption; resistive heating element; size 1 mm; size 1 mum; size 320 mum; size 600 mum; temperature 562.4 C; temperature 565.9 C; temperature 592.5 C; temperature 599.5 C; temperature sensitivity; thermal conductivity gas sensor; tungsten microheater; Argon; Atmospheric modeling; Gas detectors; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2013 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4673-5670-1
Electronic_ISBN
1545-827X
Type
conf
DOI
10.1109/SMICND.2013.6688086
Filename
6688086
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