DocumentCode :
2545051
Title :
Analog/RF circuit design techniques for nanometerscale IC technologies
Author :
Nauta, Bram ; Annema, Anne-Johan
Author_Institution :
Inst. of Res., Twente Univ., Enschede, Netherlands
fYear :
2005
fDate :
12-16 Sept. 2005
Firstpage :
45
Lastpage :
53
Abstract :
CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; low-power electronics; nanoelectronics; radiofrequency integrated circuits; RF circuit design; analog circuit design; analog design; gate-leakage mismatch; low voltage circuit techniques; nanometer scale CMOS technology; nanometerscale IC technology; thick-oxide transistors; thin-oxide transistor; Analog integrated circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; Circuit synthesis; Costs; Intelligent sensors; Radio frequency; Radiofrequency integrated circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN :
0-7803-9205-1
Type :
conf
DOI :
10.1109/ESSCIR.2005.1541556
Filename :
1541556
Link To Document :
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