DocumentCode :
2545067
Title :
Effect of hydrogen plasma passivation on the efficiency of polycrystalline silicon solar cells
Author :
Coppye, J. ; Szlufcik, J. ; Elgamel, H.E. ; Ghannam, M. ; De Schepper, P. ; Nijs, J. ; Mertens, R.
Author_Institution :
Interuniv. Micro-Electron. Center, Leuven, Belgium
fYear :
1991
fDate :
7-11 Oct 1991
Firstpage :
873
Abstract :
The effect of front-side and back-side hydrogen plasma passivation on the efficiency of polycrystalline silicon solar cells is studied. Experiments are performed on clean room processed cells and on solar cells processed by screenprinting techniques. A study has been carried out by varying the temperature, power, time, and pressure of the process. Different plasma conditions have been optimized for solar cells with an oxide-passivated surface and cells with an oxide-free surface. In the case of screenprinted cells, plasma hydrogenation performed before metallization of the front contacts has been found to be more advantageous than plasma hydrogenation performed after front metallization
Keywords :
elemental semiconductors; hydrogen; passivation; silicon; solar cells; Si:H2 polycrystalline solar cells; back-side passivation; clean room processed cells; efficiency; front contacts; front-side passivation; metallization; oxide-free surface; oxide-passivated surface; power; pressure; screenprinted cells; temperature; time; Electrodes; Hydrogen; Passivation; Photovoltaic cells; Plasma applications; Plasma displays; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
Type :
conf
DOI :
10.1109/PVSC.1991.169334
Filename :
169334
Link To Document :
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