DocumentCode :
2545070
Title :
A low-power, radiation-resistant ASIC for SDD-based x-ray spectrometers
Author :
Shaorui Li ; De Geronimo, G. ; Wei Chen ; D´Anadragora, Alessio ; Fried, J. ; Zheng Li ; Pinelli, Donald A. ; Smith, G.C. ; Gaskin, Jessica A. ; Ramsey, B.D.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
fYear :
2012
fDate :
Oct. 27 2012-Nov. 3 2012
Firstpage :
371
Lastpage :
375
Abstract :
We present an Application Specific Integrated Circuit (ASIC) for high resolution x-ray spectrometers (XRS) in radiation harsh environment (such as Jovian system). The ASIC was designed to read out signals from low resistivity pixelated Silicon-Drift-Detectors (SDD) to ensure radiation hardness. The readout is done by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW and provides 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, pile-up rejection, and peak detection with analog memory. The readout is sparse and based on a custom low-power tristatable low-voltage differential signaling. A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm2, and dissipates less than 20 mW/cm2. The ASICs were powered on and irradiated using a beam line with 200 MeV protons, to doses ranging from 0.25 Mrad to 12 Mrad. Performance degradation due to radiation-induced leakage current was observed to peak around 2 Mrad dose. Critical contributors to the degradation were identified through simulation and measurements, and corresponding circuitry was modified to address the issues. Measurements on the radiation-resistant design have shown excellent radiation resistance at doses from 1 to 8 Mrad.
Keywords :
X-ray astronomy; X-ray detection; X-ray spectrometers; application specific integrated circuits; astronomical instruments; elemental semiconductors; radiation hardening (electronics); readout electronics; silicon; SDD based X-ray spectrometers; analog memory; anode wire bonding; application specific integrated circuit; baseline stabilization; electron volt energy 200 meV; low power ASIC; low resistivity pixelated silicon drift detectors; peak detection; pile-up rejection; radiation hardness; radiation harsh environment; radiation resistant ASIC; radiation resistant design;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
Conference_Location :
Anaheim, CA
ISSN :
1082-3654
Print_ISBN :
978-1-4673-2028-3
Type :
conf
DOI :
10.1109/NSSMIC.2012.6551128
Filename :
6551128
Link To Document :
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