• DocumentCode
    2545070
  • Title

    A low-power, radiation-resistant ASIC for SDD-based x-ray spectrometers

  • Author

    Shaorui Li ; De Geronimo, G. ; Wei Chen ; D´Anadragora, Alessio ; Fried, J. ; Zheng Li ; Pinelli, Donald A. ; Smith, G.C. ; Gaskin, Jessica A. ; Ramsey, B.D.

  • Author_Institution
    Brookhaven Nat. Lab., Upton, NY, USA
  • fYear
    2012
  • fDate
    Oct. 27 2012-Nov. 3 2012
  • Firstpage
    371
  • Lastpage
    375
  • Abstract
    We present an Application Specific Integrated Circuit (ASIC) for high resolution x-ray spectrometers (XRS) in radiation harsh environment (such as Jovian system). The ASIC was designed to read out signals from low resistivity pixelated Silicon-Drift-Detectors (SDD) to ensure radiation hardness. The readout is done by wire-bonding the anodes to the inputs of the ASIC. The ASIC dissipates 32 mW and provides 16 channels of low-noise charge amplification, high-order shaping with baseline stabilization, discrimination, pile-up rejection, and peak detection with analog memory. The readout is sparse and based on a custom low-power tristatable low-voltage differential signaling. A unit of 64 SDD pixels, read out by four ASICs, covers an area of 12.8 cm2, and dissipates less than 20 mW/cm2. The ASICs were powered on and irradiated using a beam line with 200 MeV protons, to doses ranging from 0.25 Mrad to 12 Mrad. Performance degradation due to radiation-induced leakage current was observed to peak around 2 Mrad dose. Critical contributors to the degradation were identified through simulation and measurements, and corresponding circuitry was modified to address the issues. Measurements on the radiation-resistant design have shown excellent radiation resistance at doses from 1 to 8 Mrad.
  • Keywords
    X-ray astronomy; X-ray detection; X-ray spectrometers; application specific integrated circuits; astronomical instruments; elemental semiconductors; radiation hardening (electronics); readout electronics; silicon; SDD based X-ray spectrometers; analog memory; anode wire bonding; application specific integrated circuit; baseline stabilization; electron volt energy 200 meV; low power ASIC; low resistivity pixelated silicon drift detectors; peak detection; pile-up rejection; radiation hardness; radiation harsh environment; radiation resistant ASIC; radiation resistant design;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
  • Conference_Location
    Anaheim, CA
  • ISSN
    1082-3654
  • Print_ISBN
    978-1-4673-2028-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2012.6551128
  • Filename
    6551128