DocumentCode :
2545129
Title :
Porous and RF sputtering InP for portable THz-TDS in pharmaceutical and medical applications
Author :
Sirbu, Lilian ; Ghimpu, Lidia ; Danila, M. ; Muller, Rudolf ; Matei, Adriana ; Comanescu, F. ; Ionescu, Adrian Mihai ; Grigore, Oana ; Dascalu, T. ; Sarua, Andrei
Author_Institution :
Inst. of Electron. Eng. & Nanotechnol. “D. Ghitu”, Chisinau, Moldova
Volume :
1
fYear :
2013
fDate :
14-16 Oct. 2013
Firstpage :
69
Lastpage :
72
Abstract :
We developed a technology for deposition of metal contacts/wires upon nanoporous InP thin film structures and RF sputtered InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron sputtering by varying the substrate temperature (50-100°C), under constant argon pressure (6.3·10-3 Bar) and RF power (40-100 W).
Keywords :
III-V semiconductors; glass; indium compounds; nanoporous materials; porous semiconductors; semiconductor thin films; sputter deposition; terahertz waves; InP; RF magnetron sputtering; RF sputtering; THz TDS; glass substrate; medical applications; metal contacts; nanoporous thin film structures; pharmaceutical applications; power 40 W to 100 W; substrate temperature; temperature 50 degC to 100 degC; wires; Antennas; Films; Indium phosphide; Laser beams; Radio frequency; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2013 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4673-5670-1
Electronic_ISBN :
1545-827X
Type :
conf
DOI :
10.1109/SMICND.2013.6688092
Filename :
6688092
Link To Document :
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