Additivity of phosphorus gettering and hydrogenation in multicrystalline silicon cells

Author

Perichaud, Isabelle ; Martinuzzi, S.

Author_Institution

Lab. de Photoelectr. des Semi-Conducteurs, Faculte des Sci. et Techniques de Marseille, France

fYear

1991

fDate

7-11 Oct 1991

Firstpage

877

Abstract

External gettering effect by phosphorus diffusion is used to improve multicrystalline silicon wafers. After diffusion at 900°C to 4 h it was found that the effective diffusion lengths L_n of minority carriers achieve or exceed 200 μ. After diffusion at 850°C for 4 h the improvements are less marked, and hydrogenation is needed to obtain the same increase of L_n. SIMS analysis indicate that the gettered impurities are essentially iron, copper and nickel. LBIC scanning show that grains, grain boundaries and dislocations are partly passivated during the gettering

Keywords

carrier lifetime; elemental semiconductors; getters; grain boundaries; minority carriers; passivation; silicon; solar cells; LBIC scanning; SIMS analysis; diffusion lengths; dislocations; external gettering; grain boundaries; grains; hydrogenation; minority carriers; multicrystalline Si solar cells; passivation; semiconductor; Atomic measurements; Copper; Crystallography; Gettering; Grain boundaries; Impurities; Iron; Nickel; Photovoltaic cells; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169335

Filename

169335