Title :
Improvement of silicon nitride solar cells after thermal processing gettering or passivation
Author :
Muller, J.C. ; Hartiti, B. ; Hussian, E. ; Schunck, J.P. ; Siffert, P. ; Sarti, D.
Author_Institution :
CRN, Lab. PHASE, Strasbourg, France
Abstract :
Experiments carried out by RF glow discharge on phosphorus-diffused N+P junctions have shown that hydrogen neutralization only takes place in the 300-400°C temperature range. The observed increase of the bulk diffusion length LD is completely lost if post annealing is performed at temperatures higher than the stability of hydrogen bonds with defects or impurities (i.e., 450-500°C). However, some LD improvement reappears for temperatures higher than 650°C which is probably correlated with an enhancement of the phosphorus gettering
Keywords :
diffusion in solids; getters; passivation; semiconductor materials; silicon compounds; solar cells; SiN solar cells; bulk diffusion length; passivation; post annealing; thermal processing gettering; Annealing; Gettering; Glow discharges; Hydrogen; Impurities; Photovoltaic cells; Radio frequency; Silicon; Stability; Temperature distribution;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169336
