DocumentCode
2545457
Title
Simple and Accurate Models for Capacitance Increment due to Metal Fill Insertion
Author
Youngmin Kima ; Petranovic, Dusan ; Sylvester, Dennis
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
fYear
2007
fDate
23-26 Jan. 2007
Firstpage
456
Lastpage
461
Abstract
Inserting metal fill to improve inter-level dielectric thickness planarity is an essential part of the modern design process. However, the inserted fill shapes impact the performance of signal interconnect by increasing capacitance. In this paper, we analyze and model the impact of the metal dummy on the signal capacitance with various parameters including their electrical characteristic, signal dimensions, and dummy shape and dimensions. Fill has differing impact on interconnects depending on whether the signal of interest is in the same layer as the fill or not. In particular intra-layer dummy has its greatest impact on coupling capacitance while inter-layer dummy has more impact on the ground capacitance component. Based on an analysis of fill impact on capacitance, we propose simple capacitance increment models (Cc for intra-layer dummy and Cg for inter-layer dummy). To consider the realistic case with both signals and metal fill in adjacent layers, we apply a weighting function approach in the ground capacitance model. We verify this model using simple test patterns and benchmark circuits and find that the models match well with field solver results (1.2% average error with much faster runtime than commercial extraction tools, the runtime overhead reduced by ~75% for all benchmark circuits).
Keywords
filler metals; integrated circuit interconnections; benchmark circuits; capacitance increment; dummy dimensions; dummy shape; electrical characteristic; inter level dielectric thickness planarity; metal dummy; metal fill insertion; signal capacitance; signal dimensions; simple test patterns; weighting function; Benchmark testing; Capacitance; Circuit testing; Dielectrics; Integrated circuit interconnections; Process design; Runtime; Semiconductor device modeling; Shape; Signal analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference, 2007. ASP-DAC '07. Asia and South Pacific
Conference_Location
Yokohama
Print_ISBN
1-4244-0629-3
Electronic_ISBN
1-4244-0630-7
Type
conf
DOI
10.1109/ASPDAC.2007.358028
Filename
4196074
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