Recent advance on selective MOVPE technique for photonic integrated circuits

Author

Sasaki, Tatsuya ; Kudo, Koji ; Tsuji, Masayoshi ; Komatsu, Keiro

Author_Institution

Optoelectron. Technol. Res. Lab., Tsukuba, Japan

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

124

Abstract

Using the narrow-stripe selective MOVPE technique, high quality InGaAsP-InGaAsP MQW was obtained. Fine selectivity and large bandgap energy shift were also obtained for InGaAs-InAlAs MQW. These results confirm extensive capability of this technique to various photonic integrated circuits (PICs) for advanced optical transmission systems.

Keywords

energy gap; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical communication equipment; semiconductor growth; vapour phase epitaxial growth; InGaAs-InAlAs; InGaAs-lnAlAs MQW; InGaAsP-InGaAsP; advanced optical transmission systems; fine selectivity; high quality InGaAsP-lnGaAsP MQW; large bandgap energy shift; narrow-stripe selective MOVPE technique; photonic integrated circuits; selective MOVPE technique; Artificial intelligence; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Optical surface waves; Optical waveguides; Photonic band gap; Photonic integrated circuits; Planar waveguides; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571582

Filename

571582